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Sic power mosfet manufacturers

I have found results from400+products and200+suppliers aboutSic power mosfet

Dongguan Merry Electronic Co., Ltd.mic-icon
Satisfies 3/3 of your requirements
Boost Chopper SiC MOSFET 1200V - 55A full Silicon Carbide Power Module Stable temperature behavior Fetures Applications MSC40SM120JCU2

Boost Chopper SiC MOSFET 1200V - 55A full Silicon Carbide Power Module Stable temperature behavior Fetures Applications MSC40SM120JCU2

US$71.00
1,000 Pieces(MOQ)
Buck Chopper SiC MOSFET 1200V-89A full Silicon Carbide Power Module High efficiency converter Fetures Applications MSC70SM120JCU3

Buck Chopper SiC MOSFET 1200V-89A full Silicon Carbide Power Module High efficiency converter Fetures Applications MSC70SM120JCU3

US$65.00
1,000 Pieces(MOQ)
1200V SiC MOSFET Power Module, VDS: 1200V, ID: 53A, RDS(on) 42mΩ, fetures, applications, SOT-227, MC40UZ12ST

1200V SiC MOSFET Power Module, VDS: 1200V, ID: 53A, RDS(on) 42mΩ, fetures, applications, SOT-227, MC40UZ12ST

US$2.75
1,000 Pieces(MOQ)
750V/1.25mΩ SiC MOSFET, P6, MD13HTC75P6HE

750V/1.25mΩ SiC MOSFET, P6, MD13HTC75P6HE

US$208.00
1,000 Pieces(MOQ)
1200V/2.12 mΩ SiC MOSFET, N6, MD22HFC120N6HY

1200V/2.12 mΩ SiC MOSFET, N6, MD22HFC120N6HY

US$95.00
1,000 Pieces(MOQ)
750V/1.0mΩ SiC MOSFET, N5, MD10HFS75N5HT_B29

750V/1.0mΩ SiC MOSFET, N5, MD10HFS75N5HT_B29

US$118.00
1,000 Pieces(MOQ)
1200V/2.83mΩ SiC MOSFET, N4, MD29HFC120N4HFY

1200V/2.83mΩ SiC MOSFET, N4, MD29HFC120N4HFY

US$298.00
1,000 Pieces(MOQ)
1200V/8.86 mΩ SiC MOSFET, T6, DM88C12T6

1200V/8.86 mΩ SiC MOSFET, T6, DM88C12T6

US$198.00
1,000 Pieces(MOQ)
1200V SiC MOSFET Module, 100A, 17mΩ, ASC100N1200EP

1200V SiC MOSFET Module, 100A, 17mΩ, ASC100N1200EP

US$0.81
1,000 Pieces(MOQ)
Sample Available
1200V SiC MOSFET Module, 100A/15V, 20mΩ, Toll, ASR20N1200MD02PB

1200V SiC MOSFET Module, 100A/15V, 20mΩ, Toll, ASR20N1200MD02PB

US$0.65
1,000 Pieces(MOQ)
1200V/17mΩ SiC Mosfet Discrete, T2, DM170S12TDRB

1200V/17mΩ SiC Mosfet Discrete, T2, DM170S12TDRB

US$298.00
1,000 Pieces(MOQ)
1200V, 100A/15V, 20mΩ, N-Channel SIC MOSFET, TO-247-4, ASC100N1200MT4PB

1200V, 100A/15V, 20mΩ, N-Channel SIC MOSFET, TO-247-4, ASC100N1200MT4PB

US$4.13
1,000 Pieces(MOQ)
Sample Available
1200V/400A/1.2mΩ/18V SiC Mosfet Module, DWC3, ASC400N1200MD3F

1200V/400A/1.2mΩ/18V SiC Mosfet Module, DWC3, ASC400N1200MD3F

US$0.92
1,000 Pieces(MOQ)
1200V/300A/5.7mΩ/18V SiC Mosfet Module, EasyPACK, ASC300N1200MEP2B

1200V/300A/5.7mΩ/18V SiC Mosfet Module, EasyPACK, ASC300N1200MEP2B

US$0.88
1,000 Pieces(MOQ)
1200V/400A/4.2mΩ/18V SiC Mosfet Module, HPD, ASC400N1200HPD

1200V/400A/4.2mΩ/18V SiC Mosfet Module, HPD, ASC400N1200HPD

US$0.71
1,000 Pieces(MOQ)
1200V/800A/2.2mΩ/18V SiC Mosfet Module, DCS12, ASC800N1200DCS12

1200V/800A/2.2mΩ/18V SiC Mosfet Module, DCS12, ASC800N1200DCS12

US$0.93
1,000 Pieces(MOQ)
650V/32A/100mΩ, Silicon Carbide Power MOSFET, TO-220-3L, YJD2065100PGH

650V/32A/100mΩ, Silicon Carbide Power MOSFET, TO-220-3L, YJD2065100PGH

US$0.92
1,000 Pieces(MOQ)
650V/32A/100mΩ, Silicon Carbide Power MOSFET, TO-263-7L, YJD2065100B7GH

650V/32A/100mΩ, Silicon Carbide Power MOSFET, TO-263-7L, YJD2065100B7GH

US$0.95
1,000 Pieces(MOQ)
SG30N04Q Low Input Capacitance Fetures Applications 30V N-Channel Power advanced Trench technology MOSFET

SG30N04Q Low Input Capacitance Fetures Applications 30V N-Channel Power advanced Trench technology MOSFET

US$0.13-1.00
1 Piece(MOQ)
1000V/3A/2.6Ω, Super Junction Power MOSFET, TO-220, WMK05N100C2

1000V/3A/2.6Ω, Super Junction Power MOSFET, TO-220, WMK05N100C2

US$0.90
1,000 Pieces(MOQ)
900V/10A/0.5Ω, Super Junction Power MOSFET, TO-262, WMN90R500S

900V/10A/0.5Ω, Super Junction Power MOSFET, TO-262, WMN90R500S

US$0.85
1,000 Pieces(MOQ)
1000V/4A/2.0Ω, Super Junction Power MOSFET, TO-220F, WML07N100C2

1000V/4A/2.0Ω, Super Junction Power MOSFET, TO-220F, WML07N100C2

US$0.89
1,000 Pieces(MOQ)
900V/4.5A/1.28Ω, Super Junction Power MOSFET, TO-251, WMP90R1K5S

900V/4.5A/1.28Ω, Super Junction Power MOSFET, TO-251, WMP90R1K5S

US$0.88
1,000 Pieces(MOQ)
650V 0.028Ω Super Junction Power MOSFET, ID: 99A, VGS: 30V, TO-247, WMJ90N65SR

650V 0.028Ω Super Junction Power MOSFET, ID: 99A, VGS: 30V, TO-247, WMJ90N65SR

US$0.93
1,000 Pieces(MOQ)
Sample Available
Silicongear SG60N10S SOP-8 VDSS=60V RDS(ON),12mΩ(max.)@VGS=10V ID=9A N-Channel Power MOSFET

Silicongear SG60N10S SOP-8 VDSS=60V RDS(ON),12mΩ(max.)@VGS=10V ID=9A N-Channel Power MOSFET

US$0.98-1.00
5,000 Pieces(MOQ)
Enhancement Mode N-Channel Power MOSFET, OSG60R150PF

Enhancement Mode N-Channel Power MOSFET, OSG60R150PF

US$0.24-1.00
1 Piece(MOQ)
60V N-Channel Power MOSFET SG60N03D

60V N-Channel Power MOSFET SG60N03D

US$0.13-1.00
1 Piece(MOQ)
Silicongear SG150N06P TO-220 VDSS,150V RDS(ON),12mΩ (max.)@VGS=10V,ID,119A 150V N-Channel Power MOSFET

Silicongear SG150N06P TO-220 VDSS,150V RDS(ON),12mΩ (max.)@VGS=10V,ID,119A 150V N-Channel Power MOSFET

US$0.98-1.00
5,000 Pieces(MOQ)
100V / -100V Complementary, Power MOSFET Fetures Applications Low On-Resistance Low Miller Charge PDFN 5x6-8L (Dual) Silicongear-SGD100C03QD

100V / -100V Complementary, Power MOSFET Fetures Applications Low On-Resistance Low Miller Charge PDFN 5x6-8L (Dual) Silicongear-SGD100C03QD

US$0.15-1.00
1 Piece(MOQ)
700V, 11A, 0.38Ω N-channel Super-Junction Power MOSFET RMC70R380SN

700V, 11A, 0.38Ω N-channel Super-Junction Power MOSFET RMC70R380SN

US$0.15-1.00
1 Piece(MOQ)
20V P-Channel Enhancement Mode Power MOSFET, WM02P160R

20V P-Channel Enhancement Mode Power MOSFET, WM02P160R

US$0.12-1.00
1 Piece(MOQ)
WMJ53N65F2  TO-247  650V  0.062? Super Junction Power MOSFET with fast body diode COOLMOS Semiconductor Diode

WMJ53N65F2 TO-247 650V 0.062? Super Junction Power MOSFET with fast body diode COOLMOS Semiconductor Diode

US$1.90-2.00
1,000 Pieces(MOQ)
RUH4040M 40V 40A PDFN 5060 N-Channel Advanced Power MOSFET

RUH4040M 40V 40A PDFN 5060 N-Channel Advanced Power MOSFET

US$0.14-0.15
5,000 Pieces(MOQ)
LSB65R180GT TO-247 N-channel 650V, 20A, 0.18Ω LonFETTM Power MOSFET

LSB65R180GT TO-247 N-channel 650V, 20A, 0.18Ω LonFETTM Power MOSFET

US$0.695
1,000 Pieces(MOQ)
RU7080S, TO-263, 70V/80A, N-Channel Advanced Power MOSFET, Semiconductor Diode MOS

RU7080S, TO-263, 70V/80A, N-Channel Advanced Power MOSFET, Semiconductor Diode MOS

US$0.20-0.21
1,000 Pieces(MOQ)
P-Channel Advanced Power MOSFET

P-Channel Advanced Power MOSFET

US$0.01-0.02
1,000 Pieces(MOQ)
20V P-Channel Enhancement Mode Power MOSFET WAYON-WMS15P02T1

20V P-Channel Enhancement Mode Power MOSFET WAYON-WMS15P02T1

US$0.20
500 Pieces(MOQ)
800V/13A 380mΩ HCS80R380S N-Channel Advanced Power Mosfet

800V/13A 380mΩ HCS80R380S N-Channel Advanced Power Mosfet

US$0.60-0.66
1,000 Pieces(MOQ)
IRFBC40APBF Power MOSFET

IRFBC40APBF Power MOSFET

US$0.011-0.012
21,000 Pieces(MOQ)
RU30D20M2 N-channel MOS Advanced Power MOSFET

RU30D20M2 N-channel MOS Advanced Power MOSFET

US$0.10-0.12
1,000 Pieces(MOQ)
RU3030M2 N-Channel Advanced Power MOSFET

RU3030M2 N-Channel Advanced Power MOSFET

US$0.15-0.19
1,000 Pieces(MOQ)
40V/40A N-Channel Advanced Power MOSFET, RUH4040M

40V/40A N-Channel Advanced Power MOSFET, RUH4040M

US$0.13
1,000 Pieces(MOQ)
SOT23-3 RU3415BC P-Channel Advanced Power MOSFET

SOT23-3 RU3415BC P-Channel Advanced Power MOSFET

US$0.01-0.02
1,000 Pieces(MOQ)
LSD80R980GT TO-220F N-channel 800V 5A 0.98Ω Power MOSFET

LSD80R980GT TO-220F N-channel 800V 5A 0.98Ω Power MOSFET

US$0.158
1,000 Pieces(MOQ)
70V/80A N-Channel Advanced Power MOSFET, TO-263, RU7080S-1

70V/80A N-Channel Advanced Power MOSFET, TO-263, RU7080S-1

US$0.29
1,000 Pieces(MOQ)
Low Input Capacitance Low Miller Charge Lithium-Ion Secondary Batteries 60V N-Channel Power MOSFET Fetures Applications Silicongear-SG60N03LI

Low Input Capacitance Low Miller Charge Lithium-Ion Secondary Batteries 60V N-Channel Power MOSFET Fetures Applications Silicongear-SG60N03LI

US$0.09-1.00
1 Piece(MOQ)
RUH1H150S-R 100V/150A N-Channel Advanced Power MOSFET

RUH1H150S-R 100V/150A N-Channel Advanced Power MOSFET

US$0.50-0.55
1,000 Pieces(MOQ)
LND7N65D TO-220F N-channel650V,7A PowerMOSFET  HV Planar MOSFET VDMOS

LND7N65D TO-220F N-channel650V,7A PowerMOSFET HV Planar MOSFET VDMOS

US$0.22-0.23
1,000 Pieces(MOQ)
LNG4N65 TO-252   N-channel 650V, 4A Power MOSFET

LNG4N65 TO-252 N-channel 650V, 4A Power MOSFET

US$0.10-0.13
1,000 Pieces(MOQ)
WML08N60C4 TO-220F 600V Super Junction Power MOSFET

WML08N60C4 TO-220F 600V Super Junction Power MOSFET

US$0.14
1,000 Pieces(MOQ)
Sample Available
LND4N65 TO-220F N-channel650V, 4A PowerMOSFET  HV Planar MOSFET VDMOS

LND4N65 TO-220F N-channel650V, 4A PowerMOSFET HV Planar MOSFET VDMOS

US$0.13-0.14
1,000 Pieces(MOQ)
Lsd65r125ht N-Channel 650V 25A1 0.125Ω Power Mosfet

Lsd65r125ht N-Channel 650V 25A1 0.125Ω Power Mosfet

US$0.10-0.13
1,000 Pieces(MOQ)
68V/88A N-Channel Advanced Power Mosfet, TO-220 Ru6888R

68V/88A N-Channel Advanced Power Mosfet, TO-220 Ru6888R

US$0.10
1,000 Pieces(MOQ)
70V/80A N-Channel Advanced Power Mosfet, TO-263, RU7080S-2

70V/80A N-Channel Advanced Power Mosfet, TO-263, RU7080S-2

US$0.10
1,000 Pieces(MOQ)
30V/-14.5A Ru30L15h P-Channel Advanced Power Mosfet

30V/-14.5A Ru30L15h P-Channel Advanced Power Mosfet

US$0.10-0.13
1,000 Pieces(MOQ)
Silicongear DG100N02G TO-263 (D2PAK) VDSS=100V RDS(ON)max. VGS=10V 3.9mΩ ID=100A DG-FET™ 100V N-Channel Power MOSFET

Silicongear DG100N02G TO-263 (D2PAK) VDSS=100V RDS(ON)max. VGS=10V 3.9mΩ ID=100A DG-FET™ 100V N-Channel Power MOSFET

US$0.98-1.00
5,000 Pieces(MOQ)
Lsnc65r380ht N-Channel 650V, 11A1 0.38Ω Lonfettm Power Mosfet

Lsnc65r380ht N-Channel 650V, 11A1 0.38Ω Lonfettm Power Mosfet

US$0.10-0.13
1,000 Pieces(MOQ)
40V -32A Ru40L10L P-Channel Advanced Power Mosfet

40V -32A Ru40L10L P-Channel Advanced Power Mosfet

US$0.10-0.13
1,000 Pieces(MOQ)
WMM14N60C4 TO-263 600V Super Junction Power Mosfet

WMM14N60C4 TO-263 600V Super Junction Power Mosfet

US$0.018-0.02
10 Pieces(MOQ)
WMK10N60C4 TO-220 WAYON 600V Super Junction Power Mosfet

WMK10N60C4 TO-220 WAYON 600V Super Junction Power Mosfet

US$0.018-0.02
10 Pieces(MOQ)
Dongguan Meizhao Electronics Co., Ltd.mic-icon
Satisfies 3/3 of your requirements
High-Performance 3300V N-Channel Sic Mosfet for Efficient Power Management Asc80n3300mt4

High-Performance 3300V N-Channel Sic Mosfet for Efficient Power Management Asc80n3300mt4

US$28.00
30 Pieces(MOQ)
Sample Available
1200V 125A Sic Mosfet Power Module C1 Ultra Low Loss Mc14hfz12c1n

1200V 125A Sic Mosfet Power Module C1 Ultra Low Loss Mc14hfz12c1n

US$125.00
500 Pieces(MOQ)
Sample Available
1200V N-CH Sic Power Mosfet with Low on-Resistance Performance Wscm040r120t2c Transistor

1200V N-CH Sic Power Mosfet with Low on-Resistance Performance Wscm040r120t2c Transistor

US$1.85
30 Pieces(MOQ)
Sample Available
to-263-7L Silicon Carbide Power Mosfet for Efficient Switching

to-263-7L Silicon Carbide Power Mosfet for Efficient Switching

US$0.098
500 Pieces(MOQ)
Sample Available
Silicon Carbide Power Mosfet 1200V 38A for High Frequencies

Silicon Carbide Power Mosfet 1200V 38A for High Frequencies

US$0.097
500 Pieces(MOQ)
Sample Available
1200V 66A Silicon Carbide Power Mosfet (N-Channel Enhancement) to-247ab High-Frequency Yjd212040nctg2q

1200V 66A Silicon Carbide Power Mosfet (N-Channel Enhancement) to-247ab High-Frequency Yjd212040nctg2q

US$0.093
500 Pieces(MOQ)
Sample Available
650V 60A Silicon Carbide Power Mosfet (N-Channel Enhancement) in to-220-3L Package Yjd206550pgh

650V 60A Silicon Carbide Power Mosfet (N-Channel Enhancement) in to-220-3L Package Yjd206550pgh

US$0.786
1,000 Pieces(MOQ)
Sample Available
High Performance 750V/5.00 MΩ Sic Mosfet Discrete Without Diode Dm50c08t6

High Performance 750V/5.00 MΩ Sic Mosfet Discrete Without Diode Dm50c08t6

US$1.10
1,000 Pieces(MOQ)
Sample Available
750V/1.0MΩ 998A 2 in One-Package Sic Mosfet MD10hfs75n5ht_B29

750V/1.0MΩ 998A 2 in One-Package Sic Mosfet MD10hfs75n5ht_B29

US$0.144
2,000 Pieces(MOQ)
Sample Available
750V/1.25MΩ 630A 6 in One-Package Sic Mosfet MD13HTC75p6he

750V/1.25MΩ 630A 6 in One-Package Sic Mosfet MD13HTC75p6he

US$0.144
2,000 Pieces(MOQ)
Sample Available
Efficient 600V Super Junction Mosfet for Power Applications

Efficient 600V Super Junction Mosfet for Power Applications

US$0.161
2,500 Pieces(MOQ)
550V 300A N-Channel Mosfet for Efficient Power Management

550V 300A N-Channel Mosfet for Efficient Power Management

US$0.195
3,000 Pieces(MOQ)
85V 240A N-Channel Enhancement Mode Power Mosfet in Toll Package Wmll029nv8hgs

85V 240A N-Channel Enhancement Mode Power Mosfet in Toll Package Wmll029nv8hgs

US$0.036
2,500 Pieces(MOQ)
Sample Available
N-Channel 650V, 5A 2.1ω Power Mosfet in to-252 Package LNG5n65b

N-Channel 650V, 5A 2.1ω Power Mosfet in to-252 Package LNG5n65b

US$0.09
2,500 Pieces(MOQ)
Sample Available
20V/-20V 5.6A/-3.7A N-Channel and P-Channel Complementary Power Mosfet in Sot-23-6L Package Yjs2308A

20V/-20V 5.6A/-3.7A N-Channel and P-Channel Complementary Power Mosfet in Sot-23-6L Package Yjs2308A

US$0.789
1,000 Pieces(MOQ)
Sample Available
33A to-252 Package N-Channel Mosfet for Power Applications

33A to-252 Package N-Channel Mosfet for Power Applications

US$0.159
2,500 Pieces(MOQ)
Wmk060n10lgs 100V N-Channel Enhancement Mode Power Mosfet

Wmk060n10lgs 100V N-Channel Enhancement Mode Power Mosfet

US$0.23
2,000 Pieces(MOQ)
Sample Available

Sourcing guidance for Sic Power Mosfet

What are the key technical advantages of SiC Power MOSFETs over traditional Silicon (Si) MOSFETs?

SiC Power MOSFETs offer superior thermal conductivity, a higher breakdown electric field, and lower switching losses. These properties allow for higher switching frequencies, which enables the use of smaller passive components (inductors and capacitors), leading to increased power density and reduced overall system size and weight.

What critical electrical parameters should B2B buyers verify in the datasheet?

Buyers must prioritize Drain-Source On-Resistance (RDS(on)), as lower values reduce conduction loss. Additionally, check the Gate Charge (Qg) for switching efficiency, Breakdown Voltage (V(BR)DSS) to ensure safety margins (common ratings include 650V, 1200V, and 1700V), and the Maximum Operating Junction Temperature (Tj), which typically reaches 175°C for high-performance SiC devices.

Which industry standards and certifications are mandatory for SiC Power MOSFETs?

For automotive applications, AEC-Q101 qualification is essential. For industrial use, ensure compliance with JEDEC standards. Furthermore, all components must adhere to RoHS (Restriction of Hazardous Substances) and REACH regulations to meet international environmental and safety compliance for export to the EU and North America.

How does the packaging type affect the performance of SiC MOSFETs?

Packaging is crucial for heat dissipation and parasitic inductance. TO-247-3 is common, but TO-247-4 (with a Kelvin source pin) is preferred for high-speed switching to reduce gate circuit inductance. For ultra-compact designs, surface-mount packages like D2PAK-7L are increasingly used to optimize thermal management and PCB space.

Cross-Border Procurement Strategy for SiC Semiconductors

How can buyers mitigate the risk of counterfeit or refurbished SiC components?

Always request a Certificate of Conformity (CoC) and traceability documentation back to the wafer fab. When sourcing via Made-in-China.com, prioritize Audited Suppliers and request third-party lab testing reports (such as decapsulation or X-ray inspection) for large-scale batches to ensure die authenticity and wire-bonding quality.

What are the best practices for negotiating lead times and pricing in the volatile semiconductor market?

Given the high demand for SiC, buyers should negotiate Rolling Forecasts rather than one-off spot buys to secure capacity. Aim for tiered pricing structures where costs drop by 10-15% as volume exceeds 5,000 units. Always clarify if the quoted price includes wafer-level testing or just package-level testing.

What logistics precautions are necessary for shipping sensitive electronic components?

SiC MOSFETs are sensitive to Electrostatic Discharge (ESD) and moisture. Ensure the supplier uses ESD-shielding bags, vacuum-sealed moisture barrier bags (MBB), and includes humidity indicator cards. For international shipping, specify air freight with climate-controlled handling to prevent extreme temperature fluctuations that could affect package integrity.

How should transaction security be handled for high-value semiconductor orders?

Utilize Escrow-based payment services provided by professional platforms like Made-in-China.com to ensure funds are only released upon successful QC inspection. For first-time orders, a 30% deposit and 70% balance after third-party pre-shipment inspection (PSI) is the industry standard for protecting the buyer's capital.

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